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MIL-PRF-19500-157 Semiconductor Device, Diode, Silicon, Temperature Compensated Voltage-Reference, Types 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941Bur-1, 1N943Bur-1, 1N944Bur-1, 1N945Bur-1, And 1N946Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Jantxvm, D, L, R, F, G, H, And Jansm, D, L, R, F, G, And HThis specification covers the performance requirements for 11.70 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/157T
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. For purposes of JANS inspection, a single
device type shall be defined as devices from a single wafer lot (for each die type used in the construction). The
conformance inspection sample shall be selected from the part category with the lowest VZ rating in the inspection
lot.
Subgroup
Method
Conditions
B1
2066
As specified.
B2
2026
As specified.
B2
1022
As specified.
B3
1056
Test condition A, 25 cycles.
B3
4066
Not applicable.
B3
1071
Test condition E.
B3
2075
As specified.
B4
1037
IZ = 19.5 mA dc at TA = room ambient; ton = toff = 30 seconds minimum for
4,000 cycles. Forced air cooling allowed during off cycle.
IZM = 39 mA dc for 96 hours. TA = +75C, adjust TA to achieve TJ = +200C
B5
1027
minimum.
B6
Not applicable.
4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, JANTXV) of MIL-PRF-19500.
Subgroup
Method
Conditions
B1
2026
As specified.
B1
1022
As specified.
B2
1056
Test Condition A, 25 cycles.
B2
4066
Not applicable.
B2
1071
Test condition E.
B3
1027
See 4.3.1.
B4
2075
As specified.
B5
Not applicable.
B6
1032
As specified.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
the applicable steps of table I, subgroup 2 herein.
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