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MIL-PRF-19500-168 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A, 2N1778A, And 2N2619A, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNPN, silicon power, reverse-blocking triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16

MIL-PRF-19500/168K

TABLE II. Groups A, B, and C electrical end-point inspection measurements. 1/ 2/

MIL-STD-750

Step

Inspection

Symbol

Limits

Unit

Method

Conditions

Min

Max

IRRM1

Reverse blocking

4211

AC method, bias condition D;

mA (pk)

f = 60 Hz; VRRM = rated (see 1.4.1)

cutoff current

IDRM1

mA (pk)

Forward blocking

4206

AC method, bias condition D;

f = 60 Hz; VDRM = rated (see 1.4.1)

current

IRRM2

mA (pk)

Reverse blocking

4211

AC method, bias condition D;

TC = +125�C minimum; f = 60 Hz;

cutoff current

VRRM = rated (see 1.4.1)

IDRM2

mA (pk)

Forward blocking

4206

AC method; bias condition D;

TC = +125�C minimum; f = 60 Hz;

current

VDRM = rated (see 1.4.1)

V2 = VD = 6 V dc; RL = 50 Ω;

VGT1

Gate trigger

V dc

4221

voltage and

Re = 20 Ω maximum

IGT1

current

mA dc

VTM

ITM = 14.8 A(pk) (pulse);

1.85

V (pk)

4226

Forward "on"

voltage transfer

pulse width = 8.5 ms maximum;

ratio

duty cycle = 2 percent maximum

1/ The electrical measurements for table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows:

Subgroups 2, 3, and 6, see table II herein, steps 1, 2, 3, 4, 5, and 6.

2/ The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroups 2, 3, and 6, see table II

herein, steps 1, 2, 3, 4, 5, and 6.