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MIL-PRF-19500-168 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A, 2N1778A, And 2N2619A, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNPN, silicon power, reverse-blocking triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/168K
TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3 - Continued
TC = -65°C maximum
Low temperature operation:
Reverse blocking current
4211
AC method, bias condition D;
IRRM3
1
mA (pk)
f = 60 Hz, VRRM = rated (see 1.4.1)
Forward blocking current
4206
AC method, bias condition D;
IDRM3
1
mA (pk)
f = 60 Hz; VDRM = rated (see 1.4.1)
V2 = VD = 6 V dc; Re = 20 Ω
Gate trigger voltage and
4221
VGT1
2
V dc
current
30
mA dc
IGT2
maximum
RL = 140 Ω
2N1771A, 2N1772A
RL = 650 Ω
2N1774A, 2N1776A
RL = 650 Ω
2N1777A, 2N1778A
RL = 650 Ω
2N2619A
Subgroups 4, 5, and 6
Not applicable
Subgroup 7
Bias condition D; TC = +145°C
V/µs
Exponential rate of
4231
dv/dt
5
voltage rise
minimum repetition rate = 60 pps
test duration = 15 s; C = 10 µF;
50 Ω ≤ RL ≤ 400 Ω
2N1771A
VA = 50 V dc
VD
47
V dc
2N1772A
VA = 100 V dc
VD
95
V dc
2N1774A
VA = 200 V dc
VD
190
V dc
2N1776A
VA = 300 V dc
VD
285
V dc
2N1777A
VA = 400 V dc
VD
380
V dc
2N1778A
VA = 500 V dc
VD
475
V dc
2N2619A
VA = 600 V dc
VD
570
V dc
See footnote at end of table.
8



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