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MIL-PRF-19500-168 Semiconductor Device, Thyristors \(Controlled Rectifiers\), Silicon, Types 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A, 2N1778A, And 2N2619A, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNPN, silicon power, reverse-blocking triode thyristors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/168K
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with
the applicable steps of table II herein.
* 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition A, weight 10 pounds, application time = 15 seconds.
C3
Not applicable.
TC = +118°C, ±5°C, 50 min "on", IO = 1.25 A, TC uncontrolled, 10 minutes "off".
C6
1026
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
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