The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
completed by 29 January 2011.
MIL-PRF-19500/177H
29 October 2010
SUPERSEDING
MIL-PRF-19500/177G
6 April 2009
PERFORMANCE SPECIFICATION SHEET
*
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON LOW-POWER
TYPES 2N1131, 2N1131L, 2N1132, 2N1132L, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon low-power transistors. Two
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1, 2N1131 and 2N1132 (TO-39), 2N1131L and 2N1132L (TO-5).
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
PT (1)
PT (2)
TC = +25°C
TA = +25°C
VCBO
VCEO
VEBO
IC
TOP and TJ
°C
W
W
V dc
V dc
V dc
mA dc
2.0
0.6
50
40
5.0
600
-65 to +200
(1) Derate linearly 11.4 mW/°C for TC ≥ +25°C.
(2) Derate linearly 3.4 mW/°C for TA ≥ +25°C.
1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25°C.
│hfe│
Types
hFE1 (1)
VBE(SAT) (1)
VCE(SAT) (1)
Cobo
hfe1
VCE = 10 V dc
VCE = 5.0 V dc
IC = 150 mA dc
IC = 150 mA dc
f = 1 MHz
f = 20 MHz
IC = 150 mA dc
IC = 1.0 mA dc
IB = 15 mA dc
IB = 15 mA dc
VCB = 10 V dc
IC = 50 mA dc
f = 1 kHz
IE = 0
VCE = 10 V dc
V dc
V dc
pF
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
2N1131, L
20
45
15
50
1.5
1.3
45
2.5
20
2N1132, L
30
90
30
90
1.5
1.3
45
3.0
20
(1) Pulsed (see 4.5.1).
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:
VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dscc.dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.daps.dla.mil .
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