MIL-PRF-19500/177H
* TABLE I. Group A inspection.
* Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
Thermal Impedance
3131
See 4.3.2.
ZθJX
Collector - emitter breakdown
3011
40
V dc
Bias condition D; IC = 10 mA dc;
V(BR)CEO
voltage
pulsed (see 4.5.1)
Bias condition D; IC = 10 µA dc
Collector - base breakdown
3001
50
V dc
V(BR)CBO
voltage
µA dc
Collector - base cutoff current
3036
10
Bias condition D; VCB = 50 V dc
ICBO1
Collector - emitter cutoff
3041
10
mA dc
ICER
Bias condition B; VCE = 50 V dc;
current
pulsed (see 4.5.1); RBE ≤ 10 ohms
µA dc
Collector base cutoff current
3036
1.0
Bias condition D; VCB = 30 V dc
ICBO2
µA dc
Emitter - base cutoff current
3061
100
Bias condition D; VEB = 5.0 V dc
IEBO
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 150 mA dc; pulsed
hFE1
(see 4.5.1)
2N1131, L
20
45
2N1132, L
30
90
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 5.0 mA dc; pulsed
hFE2
(see 4.5.1)
2N1131, L
15
2N1132, L
25
Collector - emitter saturated
3071
1.3
V dc
IC = 150 mA dc; IB = 15 mA dc; pulsed
VCE(SAT)
voltage
(see 4.5.1)
Base emitter saturated
3066
1.5
V dc
VBE(SAT)
Test condition A; IC = 150 mA dc;
voltage
IB = 15 mA dc; pulsed (see 4.5.1)
Subgroup 3
TA = +150°C
High-temperature operation:
µA dc
Collector - base cutoff current
3036
100
Bias condition D; VCE = 30 V dc
ICBO3
TA = -55°C
Low-temperature operation:
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 150 mA dc;
hFE3
pulsed (see 4.5.1)
2N1131, L
10
2N1132, L
15
See footnote at end of table.
6
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