MIL-PRF-19500-177 Semiconductor Device, Transistor, Pnp, Silicon Low-Power Types 2N1131, 2N1131L, 2N1132, 2N1132L, Jan, Jantx And JantxvThis specification covers the performance requirements for PNP silicon low-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/177H

TABLE II. Group E inspection (all quality levels) - for qualification or re-qualification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

1051

Test condition C, 500 cycles.

Temperature cycling

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 2

45 devices

c=0

Intermittent life

1037

Intermittent operation life: VCB = 10 V dc, 6,000 cycles.

Adjust device current, or power, to achieve a minimum ĆTJ of

+100�C.

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 4

Thermal impedance

See table E-IX of MIL-PRF-19500, group E, subgroup 4.

curves

Subgroup 5

Not applicable

Subgroup 6

1020

Electrostatic discharge

(ESD)

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B for devices < 400 V.