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MIL-PRF-19500-177 Semiconductor Device, Transistor, Pnp, Silicon Low-Power Types 2N1131, 2N1131L, 2N1132, 2N1132L, Jan, Jantx And JantxvThis specification covers the performance requirements for PNP silicon low-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/177H
NOTES:
1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent, and the generator source
shall be 50 Ω.
2. Sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ 12 pF, rise time ≤ .5 ns.
FIGURE 2. Nonsaturated switching time test circuit.
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