MIL-PRF-19500-181 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N718A, 2N1613 And 2N1613L, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16

MIL-PRF-19500/181J

TABLE II. Group E inspection (all quality levels) - for qualification or re-qualification only.

Inspection

MIL-STD-750

Qualification

Method

Conditions

Subgroup 1

12 devices

c=0

1051

Test condition C, 500 cycles.

Temperature cycling

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See group A, subgroup 2 and 4.5.2 herein.

Subgroup 2

45 devices

C=0

Intermittent life

1037

Intermittent operation life: VCB = 10 V dc, 6,000 cycles,

Adjust device current, or power, to achieve a minimum

ĆTJ of +100�C.

Electrical measurements

See group A, subgroup 2 and 4.5.2 herein.

Subgroup 4

Thermal impedance curves.

See MIL-PRF-19500.

Sample size

N/A

Subgroup 5

Not applicable

Subgroup 6

11 devices

Electrostatic discharge (ESD)

1020

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.