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MIL-PRF-19500-181 Semiconductor Device, Transistor, Npn, Silicon, Low-Power Types 2N718A, 2N1613 And 2N1613L, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/181J
Symbol
Inches
Millimeters
Notes
Min
Max
Min
Max
CD
.178
.195
4.52
4.95
CH
.170
.210
4.32
5.33
HD
.209
.230
5.31
5.84
LC
.100 TP
2.54 TP
5
LD
.016
.021
0.41
0.53
8, 9
LL
.500
.750
12.70
19.05
7, 9
LU
.016
.019
0.41
0.48
4, 8, 9
L1
.050
1.27
9
L2
.250
6.35
9
TL
.028
.048
0.71
1.22
5
TW
.036
.046
.91
1.17
P
.100
2.54
3
Q
.030
0.76
6
r
.010
.025
α
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not
exceed .010 inch (0.254 mm).
4. (Three leads) LU applies between L1 and L2. LD applies between L2 and .5 inch (12.70 mm) from seating
plane. Diameter is uncontrolled in L1 and beyond .5 inch (12.70 mm) from seating plane.
5. Measured from maximum diameter of the actual device.
6. Details of outline in this zone optional.
7. The collector shall be electrically connected to the case.
8. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector.
9. All three leads.
10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 1. Physical dimensions 2N718A (TO-18).
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