MIL-PRF-19500/181J
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
2071
n = 45 devices, c = 0
examination
Solderability 3/
2026
n = 15 leads, c = 0
Resistance to
1022
n = 15 devices, c = 0
solvents 3/ 4/
Temp cycling 3/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements
Group A, subgroup 2
Precondition TA = +250°C at t = 24
Bond strength 3/
2037
hrs or TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Decap internal visual
2075
n = 4 device, c = 0
*
Subgroup 2
µA dc
Collector-to-base
3036
10
Bias condition D, VCBO = 75 V dc
ICBO1
cutoff current
pulsed (see 4.5.1)
µA dc
10
IEBO1
3061
Emitter to base
Bias condition D; VEBO = 7 V dc
cutoff current
pulsed (see 4.5.1)
Bias condition D; IC = 100 µA dc;
Breakdown voltage,
3011
30
V dc
V(BR)CEO
collector-emitter
pulsed (see 4.5.1)
Bias condition D, IC = 100 µA dc,
Breakdown voltage
3011
50
V dc
V(BR)CER
collector-emitter
pulsed (see 4.5.1), RBE = 10 Ω
Collector to base cutoff
3036
10
nA dc
Bias condition D, VCB = 60 V dc
ICBO2
current
10
nA dc
3061
Emitter-base cutoff
IEBO2
Bias condition D, VEB = 5 V dc
current
Collector-emitter
3071
1.5
V dc
IC = 150 mA dc, IB = 15 mA dc,
VCE(sat)1
saturated voltage
pulsed (see 4.5.1)
Base-emitter saturated
3066
1.3
V dc
Test condition A, IC = 150 mA dc,
VBE(sat)1
voltage
IB = 15 mA dc, pulsed (see 4.5.1)
See footnotes at end of table.
9
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