MIL-PRF-19500-199 Semiconductor Device, Diode, Silicon, Forward-Voltage Regulator, Type 1N816, JanThis specification covers the performance requirements for silicon, forward-voltage regulator, with a nominal forward-voltage drop of 0.64 V dc at 1 mA dc and with the following ratings and characteristics. One level of product assurance is provided for each type of device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/199D

4.4 Methods of inspection. Methods of inspection shall be as specified in table I, and as follows.

4.4.1 Steady-state operation life. This test may be conducted with a half-sine wave form of the specified peak

voltage impressed across the diode in the reverse direction followed by a half-sine wave form of the specified

average rectifier current. The forward conduction angle of the rectified current shall not be greater than 180 degrees

nor less than 150 degrees, and the power shall be equal to or greater than that of a half-sine wave.

4.4.2 Surge current IF(surge). The surge current (IF(surge) = 500 mA dc) shall be applied in the forward direction

and shall be superimposed on the current (IO = 150 mA dc) a total of ten surges at 1 minute intervals. Each

individual surge shall be a square wave pulse of 1/120 second duration or an equivalent one half sine wave with the

same effective (rms) current.

4.4.3 Pulse measurements. Conditions for pulse measurements shall be specified in section 4 of MIL-STD-750.