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MIL-PRF-19500-199 Semiconductor Device, Diode, Silicon, Forward-Voltage Regulator, Type 1N816, JanThis specification covers the performance requirements for silicon, forward-voltage regulator, with a nominal forward-voltage drop of 0.64 V dc at 1 mA dc and with the following ratings and characteristics. One level of product assurance is provided for each type of device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/199D
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Method
Conditions
Min
Max
Unit
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
°C/W
ZΘJX
Thermal impedance
3101
See 4.3.1.1
70
Forward voltage
4011
IF = 1.0 mA dc
0.576
0.704
V dc
VF
Forward voltage
4011
1.0
V dc
IF = 100 mA dc
VF1
Dynamic resistance
50
ohms
IF = 1.0 mA dc; IAC = 0.1 mA (rms);
R
f = 60 Hz
VR = 10 V (pk)
IR
µA (pk)
Reverse current at peak
4016
10
reverse voltage
VR = 6 V dc
IR
nA dc
Reverse current
4016
100
Subgroup 3
TA = +150°C
High temperature
operation:
µA dc
Reverse current
4016
DC method, VR = 6 V dc
IR2
10
TA = -55°C
Low temperature
operation:
VF2
1.2
V dc
Forward voltage
4011
IF = 100 mA (pk) (pulsed);
tp = 8.5 ms (max), duty cycle ≤ 2%.
Subgroups 4 and 5
Not applicable
Subgroup 6
IF = 150 mA dc; TA = 25°C,
4066
Surge current
IFSM = 500 ma (pk), ten
1 µs surges, 1 surge/minute
See table I, subgroup 2
Electrical measurements
1/ For sampling plan see MIL-PRF-19500.
6



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