The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
MIL-PRF-19500/302C
shall be completed by 1 November 1999
1 August 1999
SUPERSEDING
MIL-S-19500/302B
20 January 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,
SILICON, LOW-POWER,
TYPE 2N2708, JAN
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, VHF-UHF amplifier transistor. One level of
product assurance is provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to T0-72).
1.3 Maximum ratings.
PT 1/
PT 2/
VCBO
VCEO
VEBO
TJ and TSTG
IC
TA = +25 C
TC = +25 C
mW
mW
mA dc
V dc
V dc
V dc
C
300
200
50
35
20
3
-65 to +200
1/ Derate linearly 1.71 mW/ C for TC > +25 C.
2/ Derate linearly 1.14 mW/ C for TA > +25 C
1.4 Primary electrical characteristics at TA = +25 C.
NF
rb'Cc
|hfe |
hFE
Ccb
Gpe
VCE = 15 V dc
IC = 1.0 mA dc
VCE = 15 V dc
IC = 2 mA dc
VCB = 15 V dc
IC = 2 mA dc
IC = 2 mA dc
IC = 2 mA dc
VCE = 15 V dc
VCB = 2 V dc
IE = 0
VCE = 2 V dc
f = 200 MHz
f = 200 MHz
f = 100 MHz
f = 31.8 MHz
100 kHz
f
1 MHz
psec
pF
db
db
Min
30
7
9
15
Max
180
12
33
1.0
7.5
22
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,
Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing
at the end of this document or by letter.
AMSC N/A
FSC 5961
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