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MIL-PRF-19500-358 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N3305B Through 1N3350B And Rb, 1N4549B Through 1N4554B And Rb, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 50 watt, silicon, voltage regulator diodes: B type \(standard polarity\) and RB type\(reverse polarity\). Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/358F
* 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
*
B4
1037
2,000 cycles. See 4.5.8. herein.
IZ = column 4 of table III for 168 hours; TA = 125°C or adjusted, as required, to
B5
1027
give an average lot; TJ = +225°C.
RθJC = 2.0°C/W maximum. For purposes of this test "junction to case" shall be
B6
4081
used in lieu of "junction to lead" and RθJC shall be used in lieu of RθJL. The case
shall be the reference point for calculation of junction to case thermal resistance
(RθJC). The mounting arrangement shall be with heat sink to case.
* 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
B2
4066
IZSM = column 9 of table III.
IZT = column 4 of table III, adjust TA, mounting, or both to achieve
*
B3
1027
TJ = 150°C minimum.
*
B3
1037
2,000 cycles. See paragraph 4.5.8.
RθJC = 2.0°C/W maximum. For purposes of this test "junction to case" shall be
B5
4081
used in lieu of "junction to lead" and RθJC shall be used in lieu of RθJL. The case
shall be the reference point for calculation of junction to case thermal resistance
(RθJC). The mounting arrangement shall be with heat sink to case.
* 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points)
shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II
herein.
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