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MIL-PRF-19500-358 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N3305B Through 1N3350B And Rb, 1N4549B Through 1N4554B And Rb, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 50 watt, silicon, voltage regulator diodes: B type \(standard polarity\) and RB type\(reverse polarity\). Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/358F

* TABLE I. Group A inspection.

MIL-STD-750

Symbol

Limits 2/

Unit

Inspection 1/

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical inspection

2071

Subgroup 2

Forward voltage

4011

IF = 10 A dc

1.5

V dc

�A dc

Reverse current

4016

VR = column 10 of table III;

IR1

Col. 11

DC method (see 4.5.7)

Regulator voltage

4022

IZ = column 4 of table III

Col. 2

Col. 3

V dc

Subgroup 3

TA = 150�C

High temperature

operation:

�A dc

Reverse current

4016

VR = column 10 of table III;

IR2

Col. 13

DC method

Subgroup 4

Small-signal breakdown

4051

IZ = column 4 of table III;

Col. 5

ohms

impedance

Isig = 10 percent of IZ

Knee impedance

4051

IZK = 5 mA dc;

ZZK

Col. 6

ohms

Isig = 10 percent of IZ

Subgroup 5

Not applicable

Subgroup 6

Surge current (see 4.5.1)

4066

JANS level only

IZSM = column 9 of table III

End-point electrical

See table I, subgroup 2 herein

measurements

Subgroup 7

Voltage regulation

JANS level only; n = 22, c = 0

VZ(reg)

Col. 8

V dc

(see 4.5.2)

%/�C

αVZ

Temperature coefficient of

4071

Col. 12

IZ = column 4 of table III;

regulator voltage (see 4.5.4)

T1 = 30 � 3�C, T2 = T1 +100�C

1/ For JANS, all devices required by the specified sampling plan shall be subjected to subgroups 2, 3, and 4

combined.

2/ Column references are for table III herein.