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MIL-PRF-19500-358 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N3305B Through 1N3350B And Rb, 1N4549B Through 1N4554B And Rb, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for 50 watt, silicon, voltage regulator diodes: B type \(standard polarity\) and RB type\(reverse polarity\). Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/358F
* 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Tension: test condition A, 20 pounds, t = 15 seconds; Torque (stud): Test
condition D2, mounting = normal mounting means, 30 lb-in, t = 30 seconds;
bending stress: Test condition; 3 pounds, 15 seconds.
C5
Not required.
IZ = column 4 of table III, adjust TA, mounting, or both to achieve
*
C6
1027
TJ = +150°C minimum.
*
C6
1037
6,000 cycles. See paragraph 4.5.8.
IZT = column 4 of table III; T1 = 30°C ±3°C, T2 = T1 +100°C each sublot;
C8
4071
αVZ = column 12 of table III, %/°C; n = 22, c = 0; small lot = 12 devices, c = 0.
*
C9
Voltage regulation (see 4.5.2), each sublot, column 8 of table III. n = 22, c = 0
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Surge current IZSM. The currents specified in column 9 of table III shall be applied in the reverse direction
and shall be superimposed on the current (I = column 4 of table III) a total of five surges at 1 minute intervals. Each
Z
individual surge shall be a one-half square wave pulse of 1/120 second duration or a one-half sine wave with the
same effective (rms) current.
* 4.5.2 Voltage regulation VZ(reg). A current at 10 percent of I
(column 7 of table III herein) shall be maintained
ZM
until thermal equilibrium is obtained and the V shall be noted. The current shall then be increased to a level of 50
Z
percent of I
and maintained at this level until thermal equilibrium is obtained, at which time the voltage change shall
ZM
) of table III. During this test, the case temperature (T ) of the diode shall be equal to
not exceed column 8 (V
Z(reg)
C
30 ±3°C.
column 4 of table III) shall be applied until thermal equilibrium is
4.5.3 Regulator voltage. The test current (I
ZT
obtained. During this test, the case temperature (T ) of the diode shall be equal to 30 ±3°C.
C
4.5.4 Temperature coefficient of regulator voltage (αVZ). The device shall be temperature stabilized with current
applied prior to reading regulator voltage at the specified case temperatures.
4.5.5 Inspection condition. Unless otherwise specified herein, all inspections shall be made at TC of 30 ±3°C.
4.5.6 Test ratings. Test ratings shall be as shown in table III. Type numbers with the suffix "RB" shall have
identical requirements as shown in table III for the corresponding B type except the polarity shall be as specified in
3.4.1 herein.
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