MIL-PRF-19500-385 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Types 2N4856 Through 2N4861, 2N4856Ub Through 2N4861Ub, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for N-channel, depletion mode, silicon J-FET transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF 19500.

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MIL-PRF-19500/385H

* TABLE II. Groups B, C, and E delta measurements. 1/ 2/ 3/ 4/

Step

Inspection

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

25 percent change from

rDS(on)

3421

Static drain to source on-

VGS = 0; IDS = 1.0 mA dc;

state resistance

previously measured value.

15 percent change from

IDSS1

Drain current

3413

Bias condition C;

previously measured value.

VDS = 15 V dc, VGS = 0;

pulsed (see 4.5.1)

Devices which exceed the group A limits for this test shall be rejected.

The delta measurements for table E-VIA (JANS) of MIL-PRF-19500 are as follows: Subgroup 5, see table II

herein, steps 1 and 2.

The delta measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroup 6, table II herein, steps 1

and 2 (for JANS only).

The delta measurements for table E-IX of MIL-PRF-19500 are as follows: Subgroups 1 and 2, table II herein,

steps 1 and 2.