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MIL-PRF-19500-385 Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Types 2N4856 Through 2N4861, 2N4856Ub Through 2N4861Ub, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for N-channel, depletion mode, silicon J-FET transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF 19500.

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MIL-PRF-19500/385H
* TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only.
Inspection
MIL-STD-750
Sample
plan
Method
Conditions
Subgroup 1
45 devices
c=0
Temperature cycling
1051
500 cycles.
Hermetic seal
1071
Fine leak
Test conditions G or H
Gross leak
Test conditions C or D
End-point electrical
See table I, subgroup 2 and table II herein.
measurements
45 devices
Subgroup 2
c=0
Test temperature = +125C, VGS or VDG = 80 percent
Blocking life
1048
of rated, T = 1,000 hours.
End-point electrical
See table I, subgroup 2 and table II herein
measurements
Subgroup 4 and 5
Not applicable
11



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