MIL-PRF-19500/395K
TABLE I. Group A inspection.
MIL-STD-750
Symbol
Limit
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
2071
n = 45 devices, c = 0
examination 3/
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to solvents
1022
n = 15 devices, c = 0
3/ 4/ 5/
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles
n = 22 devices, c = 0
Hermetic seal 4/ 6/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Table I, subgroup 2
Electrical measurements 4/
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
Thermal impedance 7/
3131
See 4.3.2
°C/W
ZθJX
Breakdown voltage collector to
3011
40
V dc
Bias condition D; IC = 10 mA dc,
V(BR)CEO
emitter
pulsed (see 4.5.1)
µA dc
10
Bias condition D; V(BR)CBO = 75 V dc
ICBO1
Collector to base cutoff current
3036
µA dc
10
Bias condition D; V(BR)EBO = 5 V dc
Emitter to base cutoff current
3061
IEBO1
Collector to base cutoff current
3036
250
nA dc
Bias condition D; VCB = 30 V dc
ICBO2
Collector to emitter cutoff
3041
200
nA dc
Bias condition A; VCE = 30 V dc
ICEX1
current
VEB = 2.0 V dc
Emitter to base cutoff current
100
nA dc
3061
Bias condition D; VEB = 4.0 V dc
IEBO2
Forward current transfer ratio
3076
35
VCE = 1.0 V dc; IC = 10 mA dc
hFE1
40
VCE = 1.0 V dc; IC = 150 mA dc,
Forward current transfer ratio
3076
hFE2
pulsed (see 4.5.1)
40
140
VCE = 1.0 V dc; IC = 500 mA dc,
Forward current transfer ratio
3076
hFE3
pulsed (see 4.5.1)
See footnotes at end of table.
11
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