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MIL-PRF-19500-395 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N3735, 2N3735L, 2N3737, And 2N3737Ub, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/395K
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B3
2037
Test condition A.
VCB = 10 - 30 V dc.
B4
1037
B5
1027
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the
original sample). VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3).
Option 1: 96 hours minimum, sample size in accordance with table E-VIA of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours, sample size = 45, c = 0; adjust TA or PD to achieve
TJ = +225°C minimum.
B6
Not applicable.
4.4.2.2 Group B inspection, table E-VIC (small die flow, JAN, JANTX, and JANTXV). Separate samples may be
used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from
either the failed assembly lot or from another assembly lot from the same wafer lot. If the new "assembly lot" option
is exercised, the failed assembly lot shall be scrapped.
Step
Method
Condition
Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve
1
1026
TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test
time decreased as long as the devices are stressed for a total of 45,000 device hours
minimum, and the actual time of test is at least 340 hours.
Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
2
1048
n = 45 devices, c = 0.
High temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
3
1032
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
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