MIL-PRF-19500-395 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N3735, 2N3735L, 2N3737, And 2N3737Ub, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, And JanshThis specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/395K

TABLE II. Groups B and C delta measurements. 1/ 2/ 3/

Step

Inspection

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

ĆICBO2

Collector to

3036

Bias condition D,

100 percent of initial value

base cutoff

or 25 nA dc, whichever is

VCB = 30 V dc

current

greater.

�25 percent change from

ĆhFE3

Forward-current

3076

VCE = 1 V dc, IC = 500 mA dc,

transfer ratio

initial value.

pulsed (see 4.5.1)

�50 mV dc, change from

ĆVCE(SAT)3

Collector to

3071

IC = 500 mA dc, IB = 50 mA dc,

emitter voltage

previous measured value.

pulsed (4.5.1 )

(saturated)

1/ The delta measurements for table E-VIA (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 4, see table II herein, step 3.

b. Subgroup 5, see table II herein, step 3.

2/ The delta measurements for 4.4.2.2 (JAN, JANTX, JANTXV) are as follows: See table II herein, steps 1 and

3/ The delta measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroup 6, see table II herein,

steps 1 and 2 for (JANS).