MIL-PRF-19500-412 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3846, 2N3846T1, 2N3846T3, 2N3847, 2N3847T1, And 2N3847T3, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/412F

TABLE I. Group A inspection - Continued.

MIL-STD-750

Limits

Symbol

Unit

Inspection 1/

Method

Conditions

Min

Max

Subgroup 5 - Continued.

3005

Burnout by pulsing (safe

TC = +100�C; pre-pulse condition:

(3051)

operating area - dc)

see figure 9, VCE = 300 V dc,

2N3847, 2N3847T1, 2N3847T3

IC = 20 mA dc, tp = 1.0 s, 1 cycle, (T1

only

and T3 may require heatsink).

Unclamped inductive sweep

TC = +100�C, IB = 2 A dc, IC = 20 A dc,

see figure 10

Clamped inductive sweep

TC = +100�C, IB = 2 A dc, IC = 20 A dc,

see figure 11

End-point electrical

See table I, subgroup 2 herein

measurements

Subgroups 6 and 7

Not applicable

For sampling plan, see MIL-PRF-19500.

This test required for the following end-point measurements only:

Group B, subgroups 3, 4, and 5 (JANS).

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroup 2 and 6.

Group E, subgroup 1.