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MIL-PRF-19500-412 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3846, 2N3846T1, 2N3846T3, 2N3847, 2N3847T1, And 2N3847T3, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/412F
TABLE II. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Qualification
Method
Conditions
Subgroup 1
45 devices
c=0
Thermal shock
1056
0°C to +100°C, 100 cycles
glass strain
Hermetic seal
1071
Fine leak
Gross leak
Electrical measurements
See table I, subgroup 2 herein.
Subgroup 2
45 devices
c=0
Steady-state dc blocking life
1039
1,000 hours
or
1048
Electrical measurements
See table I, subgroup 2 herein.
Subgroup 4
Sample size
N/A
Thermal impedance curves
See MIL-PRF-19500.
Subgroup 5
3 devices,
c=0
Barometric pressure
1001
Pressure = 8.0 mm Hg time = 60 seconds; normal mounting
Subgroup 8
45 devices
c=0
Reverse stability
1033
Condition A for devices ≥ 400 V,
Condition B for devices < 400 V.
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