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MIL-PRF-19500-412 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N3846, 2N3846T1, 2N3846T3, 2N3847, 2N3847T1, And 2N3847T3, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/412F
* 4.3.3 Dielectric withstanding voltage.
a.
Magnitude of test voltage....................................900 V dc.
b.
Duration of application of test voltage....................15 seconds (min).
c.
Points of application of test voltage........................All leads to case (bunch connection).
d.
Method of connection.........................................Mechanical.
e.
Kilovolt-ampere rating of high voltage source..........1,200 V/1.0 mA (min).
f.
Maximum leakage current....................................1.0 mA.
g.
Voltage ramp up time...................................................500 V/second.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of table I, subgroup 1 and 2 inspection only (table E-VIB,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein.
Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B2
2026
For 2N3846 and 2N3847, depth ≥ .10 inch (2.54 mm), t = 10 ±1 second.
B4
1037
VCB ≥ 20 V dc.
B5
1027
VCB ≥ 20 V dc, adjust PT and TA to achieve TJ = +175°C ±12.5°C;
marking legibility requirements shall not apply; TA = +100°C max.
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
B1
2026
For 2N3846 and 2N3847, depth ≥ .10 inch (2.54 mm), t = 10 ±1 second.
B3
1037
For solder die attach: 2,000 cycles, VCB ≥ 20 V dc.
B3
1026
For eutectic die attach: VCB ≥ 20 V dc, adjust PT or TA to achieve TJ = 175°C min.,
TA ≤ +35°C.
B6
1032
TA = +200°C.
8



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