The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
MIL-PRF-19500/424B
shall be completed by 18 January 2007.
18 October 2006
SUPERSEDING
MIL-S-19500/424A
29 May 1995
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER,
1N5186, 1N5187, 1N5188, AND 1N5190,
JAN, JANTX, AND JANTXV
Inactive for new design after the date of this document.
*
For new design, use MIL-PRF-19500/411 (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for silicon, fast recovery rectifier diodes. Three levels
of product assurance are provided for each device type as specified in MIL-S-19500.
1.2 Physical dimensions. See figure 1 (similar to DO-41).
* 1.3 Maximum ratings.
RθJL
trr
TSTG and TJ
IFSM
IO
IO
VRWM
VR
Types
at
tp = 8.3
TA
TA
L = .375
= 150°C
= 25°C
ms
TA =
(1)
150°C
°C
°C/W
V dc
V (pk)
A dc
mA dc
A (pk)
ns
20
-65 to +175
150
80
700
3
100
100
1N5186
20
-65 to +175
200
80
700
3
200
200
1N5187
20
-65 to +175
250
80
700
3
400
400
1N5188
20
-65 to +175
400
80
700
3
600
600
1N5190
See notes on next page.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.daps.dla.mil .
AMSC N/A
FSC 5961
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