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MIL-PRF-19500-424 Semiconductor Device, Diode, Silicon, Fast Recovery, Power Rectifier, 1N5186, 1N5187, 1N5188, And 1N5190, Jan, Jantx, And JantxvThis specification covers the detail requirements for silicon, fast recovery rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

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MIL-PRF-19500/424B
* TABLE I. Group A inspection.
MIL-STD-750
Limits
Unit
Symbol
Inspection 1/
Min
Max
Method
Conditions
Subgroup 1
2071
Visual and mechanical
inspection
Subgroup 2
°C/W
ZθJX
Thermal impedance
3101
See 4.3.2
VF1
0.9
1.5
V (pk)
Forward voltage
4011
IF = 9 A dc (pulsed);
2 percent maximum duty
cycle
µA dc
IR1
2.0
Reverse current
4016
DC method;
VR = rated VRWM (see 1.3)
IR = 100 µA dc
4021
V(BR)1
Breakdown voltage
V dc
---
120
1N5186
V dc
---
240
1N5187
V dc
---
480
1N5188
V dc
---
660
1N5190
Subgroup 3
TA = +100°C
High temperature
operation:
µA dc
IR2
100
Reverse current
4016
DC method;
VR = rated VRWM (see 1.3)
Low temperature
TA = -55°C
operation:
Forward-voltage
4011
IF = 9 A (pk) (pulsed)
VF2
0.9
1.5
V (pk)
µA dc
IR3
2
Reverse current
4016
DC method;
VR = rated (see 1.3)
See footnote at end of table.
8



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