MIL-PRF-19500-424 Semiconductor Device, Diode, Silicon, Fast Recovery, Power Rectifier, 1N5186, 1N5187, 1N5188, And 1N5190, Jan, Jantx, And JantxvThis specification covers the detail requirements for silicon, fast recovery rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

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MIL-PRF-19500/424B

4.5.2 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.3 Burn-in and steady-state operation life tests. These tests shall be conducted with a half-sine waveform of the

specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the

specified average rectified current. The forward conduction angle of the rectified current shall be neither greater than

180 degrees, nor less than 150 degrees.

* 4.5.3.1 Free air power burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided

that each DUT still sees the full IO (minimum) and that the minimum applied voltage, where applicable, is maintained

through out the burn-in period. Use method 3100 of MIL-STD-750 to measure TJ.