MIL-PRF-19500/446E
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. Manufacturer's identification and date code
shall be marked on the devices. Initial container package marking shall be in accordance with MIL-PRF-19500.
3.6 Polarity. Polarity shall be as marked on figure 1.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3 and table I herein.
3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I, group
A herein.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.3 Screening (JANTX and JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed
the limits of table I herein shall not be acceptable. The JANTXV requirements apply to the internal discrete diodes
only, not to the assembly.
4.3.1 Discrete diode screening. One hundred percent of the internal discrete diodes shall be subjected to the
following.
Measurement
Screen
(see table E-IV of
JANTX and JANTXV levels
MIL-PRF-19500)
(1) 3c
Thermal impedance (see 4.5.3)
9
Not applicable
11
IR1 and VF1
12
See 4.3.1.1
Subgroup 2 of table I herein. VF1 = 0.1 V dc; IR1 = 100 percent of initial
(2) 13
value or 250 nA dc, whichever is greater
(1) Shall be performed anytime after screen 3a.
(2) Except thermal impedance, if already performed.
4.3.1.1 Power burn-in conditions. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, test
condition B, TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750 or 4.5 herein, VRWM =
rated VRWM (see 1.3), IO = 3 A dc, f = 50 - 60 Hz.
4
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