483-04, JantxThis specification covers the performance requirements for silicon, 3-phase, full wave bridge rectifiers intended for use in applications at frequencies of 1 kHz or less. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/483D

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750

Test Methods for Semiconductor Devices.

(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or

https://assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

* 2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying

activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

N = number of diodes for each leg.

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figure 1.

3.4.1 Internal construction. The rectifier bridge shall consist of a metal and plastic encased assembly of single or

parallel discrete diodes. Each discrete diode shall be a glass-to-metal, ceramic-to-metal, or fused metal oxide-to-

metal hermetically sealed package. The silicon die in each discrete diode shall be metallurgically bonded directly to

the terminal pins. The completed assembly of diodes and other internal structures shall be encapsulated in a plastic

material which polymerizes to a rigid condition by virtue of a chemical cross-linking mechanism. The rectifier bridge

shall be free of voids either visible or as evidenced by failure to pass the environment test specified. Only those

discrete diodes which have met these requirements shall be used in the rectifier bridge. Discrete diodes shall be

JANTX level. Parallel diodes may be utilized in construction of this device.

3.4.2 Terminal finish. Terminal finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and

herein. Where a choice of terminal finish is desired, it shall be specified in the acquisition document (see 6.2).