483-04, JantxThis specification covers the performance requirements for silicon, 3-phase, full wave bridge rectifiers intended for use in applications at frequencies of 1 kHz or less. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/483D

3.4.3 Parallel diode construction. For bridge design that employs more than one diode for each leg and N equals

the number of diodes for each leg, the following design and matching conditions shall be approved by the qualifying

activity.

a. Individual diode room temperature VF matching shall be performed at a current value of (IO1/N) or

greater. The VF shall be within 20 mV on each diode.

b. The same diode design shall be used in each parallel leg.

c. The design shall ensure similar lead lengths and uniform heat paths, so that all diodes in each leg are at

similar junction temperatures.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.5.1 Polarity. Polarity shall be as marked on figure 1.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3 and table I.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.3 Screening (JANTX level). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as

specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed

the limits of table I, subgroup 2 herein, and 4.3.1.1 herein shall not be acceptable.

4.3.1 Discrete diode screening. One hundred percent of the internal discrete diodes shall be subjected to the

following:

Screen

Measurement

(see table E-IV of

MIL-PRF-19500)

JANTX level

Method 3101 of MIL-STD-750 (see 4.3.1.1)

Not applicable

VF at IF/N and IR2/N of subgroup 2 of table I herein

See 4.3.1.2

VF at IF/N and IR2/N of subgroup 2 of table I herein.

VF1/n = �0.05 V dc; IR2 = 100 percent of initial value or �250 nA dc,

whichever is greater. Scope display evaluation (see 4.5.3)