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MIL-PRF-19500-483 Semiconductor Device, Silicon, High-Power, Three Phase, Full Wave Bridge Rectifier, Types M19500/483-01 Through M19500/483-04, JantxThis specification covers the performance requirements for silicon, 3-phase, full wave bridge rectifiers intended for use in applications at frequencies of 1 kHz or less. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/483D
* TABLE I. Group A inspection.
MIL-STD-750
Limits
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
4011
Forward voltage/leg
M19500/483-01
IF = 39 A dc (pk), (pulsed, see 4.5.5);
VF1
1.3
V (pk)
through -04
tp = 8.3 ms maximum; duty cycle 2 percent
Reverse current/leg
4016
DC method; VR = rated VRWM (see 1.3)
IR1
1.0
ľA dc
Reverse current
4016
DC method; VR = rated VRWM (see 1.3)
IR2
1.0
ľA dc
(discrete diode)
IR = 50 A dc
Breakdown voltage/leg
4021
VBR
M19500/483-01
220
V dc
M19500/483-02
440
V dc
M19500/483-03
660
V dc
M19500/483-04
880
V dc
Subgroup 3
TC = +100C
High temperature
operation:
A dc
Reverse current/leg
4016
DC method; VR = rated VRWM (see 1.3)
IR3
200
TA = -55C
Low temperature
operation:
A dc
Reverse current/leg
4016
DC method; VR = rated VRWM (see 1.3)
IR4
2.0
Subgroup 4
s
Reverse recovery
4061
Condition B, IF = 0.5 A,
trr
2.5
time/leg; all devices
IR = 1.0 A, IRec = 0.25 A
Dielectric withstanding
See 4.5.1
voltage
Scope display
4023
See 4.5.3; n = 116, c = 0
1/ For sampling plan see MIL-PRF-19500.
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