The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision shall
MIL-PRF-19500/498E
be completed by 12 August 20005.
12 May 2005
SUPERSEDING
MIL-PRF-19500/498D
30 April 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPES 2N6306, 2N6306T1, 2N6306T3, 2N6308, 2N6308T1, 2N6308T3, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-3), figure 2 (TO-254AA), and figure 3 (TO-257AA).
* 1.3 Maximum ratings. TA = +25°C, unless otherwise specified.
RθJC
TJ and TSTG
IC
IB
VEBO
VCEO
VCBO
PT
Type
PT
TC = +25°C
(3)
(1)
°C/W
°C
W
W
V dc
V dc
A dc
A dc
V dc
2N6306
5
125
1.4
500
250
8.0
4.0
8.0
-65 to +200
2N6306T1
6
175
1.0
500
250
8.0
4.0
8.0
-65 to +200
2N6306T3
4
125 (2)
1.3
500
250
8.0
4.0
8.0
-65 to +200
2N6308
5
125
1.4
700
350
8.0
4.0
8.0
-65 to +200
2N6308T1
6
175
1.0
700
350
8.0
4.0
8.0
-65 to +200
2N6308T3
4
125 (2)
1.3
700
350
8.0
4.0
8.0
-65 to +200
(1) See figure 4 through 6 for temperature-power derating curves.
(2) For TO-257 devices with typical mounting and small footprint, conservatively rated at 125 W and 1.3°C/W only.
(3) See figures 7 through 9, thermal impedance graphs.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at https://assist.daps.dla.mil/.
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