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MIL-PRF-19500-500 Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N5555 Through 1N5558, 1N5907, 1N5629A Through 1N5665A, Jan, Jantx, And JantxvThis specification covers the performance requirements for 1,500 watt, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/500E
TABLE IV. Group E inspection (all quality levels) for qualification only.
Sampling plan
MIL-STD-750
Inspection
Method
Conditions
Subgroup 1
n = 45, c = 0
500 cycles, condition C, -55C to +175C.
1051
Temperature cycling
Electrical measurements
See table III, steps 1, 2, 3, and 4.
n = 22, c = 0
Subgroup 2
1,000 hours. See 4.3.1
Life test
See table III, steps 1, 2, 3, and 4.
Electrical measurements
Subgroups 4 and 5
Not applicable
Subgroup 6
See 4.5.2. IPP shall be characterized by the supplier
Peak pulse current
and this data shall be available to the government.
Test shall be performed on each low and high voltage
device for each structurally identical grouping. Test to
failure.
See table III, steps 1, 2, 3, and 4.
Electrical measurements
n = 45, c = 0
Subgroup 7
1 cycle.
2031
Soldering heat
12



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