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MIL-PRF-19500-500 Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N5555 Through 1N5558, 1N5907, 1N5629A Through 1N5665A, Jan, Jantx, And JantxvThis specification covers the performance requirements for 1,500 watt, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/500E
TABLE I. Group A inspection.
Unit
Symbol
MIL-STD-750
Limits 2/
Inspection 1/
Min
Max
Method
Conditions
Subgroup 1
2071
Visual and mechanical
examination
For JANTX devices only. Inspection
2076
Radiography
will be in accordance with
manufacturer's internal failure
criteria, c = 45, n = 0
Subgroup 2
Column 5 A dc
ID
DC method, VR = VWM
4016
Standby current
(column 4 of table II)
tp 300 ms, duty cycle 2 percent,
Breakdown voltage
4022
VBR
Column 2 Column 2
V dc
IBR = column 3 of table II
Subgroup 3
TA = -55C
Low temperature
operation:
V dc
Column 10
VBR
tp 300 ms, duty cycle 2 percent,
4022
Minimum breakdown voltage
IBR = column 3 of table II
TA = 125C
High temperature operation:
Column 9 A dc
DC method, VR = VWM
4016
Reverse current leakage
ID2
(column 4 of table II)
Subgroup 4
VC
tp = 1.0 ms (see 4.5.2.a), IPP =
Column 6 V (pk)
Clamping voltage maximum
column 7 of table II, (pulsed)
(see 4.5.3)
VFM
3.5
V (pk)
Forward voltage
4011
IFM = 100 A (pk); tp = 8.3 ms
(max), duty cycle = 4 pulses per
minute (max)
Subgroup 5
Not applicable
See footnotes at end of table.
7



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