MIL-PRF-19500-500 Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N5555 Through 1N5558, 1N5907, 1N5629A Through 1N5665A, Jan, Jantx, And JantxvThis specification covers the performance requirements for 1,500 watt, silicon, transient voltage suppressor diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/500E

DO-13

Dimensions

Symbol

Notes

Inches

Millimeters

Min

Max

Min

Max

.215

.235

5.46

5.97

.293

.357

7.44

9.07

BLT

.570

14.48

.045

.100

1.14

2.54

.025

.035

0.64

0.89

1.000

1.625

25.40

41.28

.188

4.78

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. The major diameter is essentially constant along its length.

4. Within this zone, diameter may vary to allow for lead finishes and irregularities.

5. Dimension to allow for pinch or seal deformation anywhere along tubulation.

6. Lead 1 (cathode) shall be electrically connected to the case.

7. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.

FIGURE 1. Physical dimensions (DO-13).