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MIL-PRF-19500-522 Semiconductor Device, Transistor, Npn, Silicon, High-Frequency Types 2N6603 And 2N6604 Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN, silicon, microwave transistors. Three levels of product assurance are provided for the device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


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MIL-PRF-19500/522A
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4 - continued
Noise figure
----
NF
VCE = 10 V dc; IC = 5 mA dc;
f = 1 GHz (see 4.5.2 and figure 3)
2N6603
1.0
2.5
dB
2N6604
1.5
3.0
dB
Subgroups 5 and 6
Not applicable
Subgroup 7
Input reflection coefficient
----
VCE = 10 V dc; f = 1 GHz;
ZO = 50 Ω;
2N6603
/S11/
.5
.8
--
IC = 15 mA dc
°C
L0S11
+165
-165
2N6604
/S11/
.45
.75
--
IC = 30 mA dc
°C
L0S11
+155
-175
Output reflection coefficient
----
VCE = 10 V dc; f = 1 GHz;
ZO = 50 Ω;
2N6603
/S22/
.25
.5
--
IC = 15 mA dc
°C
L0S22
-70
-30
2N6604
/S22/
.2
.4
--
IC = 30 mA dc
°C
L0S22
-70
-30
Forward transfer coefficient
----
VCE = 10 V dc; f = 1 GHz;
ZO = 50 Ω;
2
2N6603
12
--
dB
IC = 15 mA dc
/S21/
2
2N6604
12
--
dB
IC = 30 mA dc
/S21/
Reverse transfer coefficient
----
VCE = 10 V dc; f = 1 GHz;
ZO = 50 Ω;
2
2N6603
--
-22.5
dB
IC = 15 mA dc
/S12/
2
2N6604
--
-22.5
dB
IC = 30 mA dc
/S12/
Power gain at optimum noise
----
6
--
dB
VCE = 10 V dc; IC = 5 mA dc;
GNF
figure
f = 2 GHz (see 4.5.2 and figures 2
and 3)
1/ For sampling plan, see MIL-PRF-19500.
7



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