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MIL-PRF-19500-544 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5152, 2N5154, 2N5152L, 2N5154L, 2N5152U3, 2N5154U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Janhce, Jankcb, Jankcbf, Jankcd, Jankce, Jankcdm, Jankcdd, Jankcdp, Jankcdl, Jankcdr, Jankcdf, Jankcdg, And JankcdhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/544H
TABLE II. Group D inspection - Continued.
Inspection 1/ 2/ 3/
Limit
Unit
Method
Conditions
Symbol
Min
Max
Subgroup 2 - Continued.
Base-emitter voltage
3066
1.45
V dc
Test condition B, VCE = 5 V dc,
VBE
(nonsaturated)
IC = 2.5 A dc, pulsed (see 4.5.1)
Base-emitter saturation voltage
3066
Test condition A, IC = 2.5 A dc,
1.67
V dc
VBE(sat)1
IB = 250 mA dc, pulsed (see 4.5.1)
Base-emitter saturation voltage
3066
Test condition A, IC = 5 A dc,
2.53
V dc
VBE(sat)2
IB = 500 mA dc, pulsed (see 4.5.1)
Collector-emitter saturation
3071
0.86
V dc
IC = 2.5 A dc, IB = 250 mA dc,
VCE(sat)1
voltage
pulsed (see 4.5.1)
Collector-emitter saturation
3071
1.73
V dc
IC = 5 A dc, IB = 500 mA dc,
VCE(sat)2
voltage
pulsed (see 4.5.1)
1/
Tests to be performed on all devices receiving radiation exposure.
2/
For sampling plan, see MIL-PRF-19500.
3/
Electrical characteristics apply to all device types unless otherwise noted.
4/
Subgroup 1 is an optional test and must be specified on the contract when required.
5/
See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and
post-radiation hFE. Notice that [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value
can never exceed the pre-radiation minimum hFE that it is based upon.
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