MIL-PRF-19500-544 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5152, 2N5154, 2N5152L, 2N5154L, 2N5152U3, 2N5154U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Janhce, Jankcb, Jankcbf, Jankcd, Jankce, Jankcdm, Jankcdd, Jankcdp, Jankcdl, Jankcdr, Jankcdf, Jankcdg, And JankcdhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/544H

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

JANS levels

JANTX and JANTXV levels

(1) 3c

Thermal impedance, method 3131 of

Thermal Impedance, method 3131 of

Not applicable

ICES1 and hFE2

48 hours minimum

ICES1 and hFE2; ĆICES1 = 100 percent of initial

ICES1 and hFE2

value or100 nA dc, whichever is greater.

ĆhFE2 = �20 percent.

Subgroup 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICES1 = 100 percent of initial value or

100 nA dc, whichever is greater.

ĆhFE2 = �20 percent.

(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements.

4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, " Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to the device to achieve TJ = +175�C minimum using a minimum PD = 75 percent of PT maximum, TA ambient

rated as defined in 1.3 herein.

4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD, (and VC where

appropriate). The ZθJX limit used in screen 3c of 4.3 herein shall comply with the thermal impedance graph in figure

9, 10, and 11 (less than or equal to the curve value at the same tH time) and shall be less than the process

determined statistical maximum limit as outlined in method 3131.

4.4 Conformance inspection. Conformance inspection shall be as specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the test and conditions

specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500

and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2

herein. Delta measurements shall be in accordance with table IV herein.