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MIL-PRF-19500-544 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5152, 2N5154, 2N5152L, 2N5154L, 2N5152U3, 2N5154U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Janhce, Jankcb, Jankcbf, Jankcd, Jankce, Jankcdm, Jankcdd, Jankcdp, Jankcdl, Jankcdr, Jankcdf, Jankcdg, And JankcdhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/544H
.120 inch (3.05 mm) x .120 inch (3.05 mm) ±.002 inch (±0.05 mm).
1.
Die size
.014 inch (0.35 mm) ±.0015 inch nominal (±0.04 mm).
2.
Die thickness
3.
Top metal
Aluminum, 54,000Å minimum, 60,000Å nominal.
4.
Back metal
A. Al/Ti/Ni/Ag, 10,000Å minimum, 12,500Å nominal.
B. Gold 6,000Å minimum, 8,000Å nominal.
5. Backside
Collector
6. Bonding pad
B = .060 x .012 inch (1.5 mm x 0.30 mm).
E = .050 x .012 inch (1.27 mm x 0.30 mm).
FIGURE 3. JANHC and JANKC (D-version) die dimensions.
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