MIL-PRF-19500-544 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5152, 2N5154, 2N5152L, 2N5154L, 2N5152U3, 2N5154U3, Jan, Jantx, Jantxv, Jantxvf, Jantxvr, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Janhcd, Janhce, Jankcb, Jankcbf, Jankcd, Jankce, Jankcdm, Jankcdd, Jankcdp, Jankcdl, Jankcdr, Jankcdf, Jankcdg, And JankcdhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/544H

4.4.2.1 Group B inspection (JANS) table E-VIA of MIL-PRF-19500.

Subgroup

Method

Conditions

1037

VCB = 10 V dc.

VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure

1027

occurs, resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,

table E-VIA, adjust TA or PD to achieve TJ = +275�C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve a

TJ = +225�C minimum.

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot

or from another assembly lot from the same wafer lot. If the new assembly lot option is exercised, the failed assembly

lot shall be scrapped.

Step

Method

Conditions

Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve

1026

TJ = +150�C minimum using a minimum of PD = 75 percent of maximum rated PT as defined

in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time

decreased as long as the devices are stressed for a total of 45,000 device hours minimum,

and the actual time of test is at least 340 hours.

Blocking life, TA = +150�C, VCB = 80 percent of rated voltage, 48 hours minimum.

1048

n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, TA = +200�C. n = 22, c = 0.

1032

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers

(or from each wafer in the lot) from each wafer lot. See MIL-PRF-19500.

b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to

the application of final lead finish.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VII of MIL-PRF-19500, and 4.4.3.1 (JANS), and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in

accordance with table I, subgroup 2 and table IV herein.