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MIL-PRF-19500-566 Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon, Logic Level, Types 2N6902, And 2N6904 Jan, Jantx, Jantxv And JansThis specification covers the performance requirements for logic level, N-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/566C
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 3
High temperature
TC = TJ =125°C
operation:
Gate to source voltage
3403
0.5
V dc
VDS > VGS; ID = 1.0 mA dc
VGS(th)2
(threshold)
± 200
Gate current
3411
Bias condition C;
nA dc
IGSS2
VGS = +10 and -10 V dc
VDS = 0 V dc
µA dc
Drain current
3413
Bias condition C;
50
IDSS2
VGS = 0 V dc
2N6902
VDS = 80 V dc
2N6904
VDS = 100 V dc
Ω
Static drain to source
3421
VGS = 5 V dc pulsed (see 4.5.1)
rDS(on)2
on-state resistance
ID2 = 9.6 A dc
2N6902
0.32
ID2 = 5.1 A dc
2N6904
1.11
Low temperature
TC = TJ = - 55°C
operation:
Gate to source voltage
3403
3.0
V dc
VDS > VGS; ID = 1.0 mA dc
VGS(th)3
(threshold)
Subgroup 4
ID = rated ID2 (see 1.3)
Switching time
3472
VGS = 5 V dc
Gate drive impedance = 7.5 Ω
Turn-on delay time
ns
td(on)
2N6902
50
VDD = 50 V dc
2N6904
45
VDD = 100 V dc
Rise time
ns
tr
2N6902
150
VDD = 50 V dc
2N6904
150
VDD = 100 V dc
Turn-off delay time
ns
td(off)
2N6902
130
VDD = 50 V dc
2N6904
135
VDD = 100 V dc
Fall time
ns
tf
2N6902
150
VDD = 50 V dc
2N6904
105
VDD = 100 V dc
See footnote at end of table.
11



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