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MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P
APPENDIX E
TABLE E-VIC. Group B inspections (small die flow only) for JAN, JANTX, and JANTXV devices.
Inspections 1/ 2/
MIL-STD-750
Sample
plan
Method
Condition
Step 1
n = 45,
c=0
Steady-state operation life 3/
1026
Test condition B, 1,000 hours minimum
4/ 5/
Electrical measurements
Group A, subgroup 2
or
intermittent operation life
1037
Intermittent life 6,000 cycles
Hermetic seal 6/
1071
a. Fine
b. Gross
Electrical measurements
Group A, subgroup 2
Step 2
n = 45,
c=0
HTRB
1048
Test condition A, 48 hours minimum.
Electrical measurements
Group A, subgroup 2
Step 3
n = 22,
c=0
t = 340 hours, TA = +200°C.
High-temperature life (non-
1032
operating),
Electrical measurements
Group A, subgroup 2
1/
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
2/
Small die shall be device types identified by the manufacturer based on the manufacturer's internal process
capabilities and the expected business model for the product. Classification of devices as small die shall be
approved by the procuring activity. Once a device type is approved a small die, it shall be processed in
accordance with the conformance inspection small die flow identified herein and shall not be changed without
qualifying activity approval.
3/
Test method 1026 of MIL-STD-750 is required for eutectic die attach and test method 1037 of MIL-STD-750 is
required for solder die attach.
4/
TJ = 150 degrees C (min) or rated TJ, whichever is less (except Schottky and power MOSFETs) for operation
life.
5/
The sample size may be increased and the test time decreased so long as the devices are stressed for a total
of 45,000 device hours minimum, and the actual time of test is at least 340 hours.
6/
Not required for glass diodes.
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