MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX A

A.3.19.6 Non-cavity double plug diode. Double plug construction where the package glass is in intimate contact

with the semiconductor die isolating the anode and cathode regions, and insuring immunity from particle related

failures. Voids may be present provided isolation (to prevent arcing) and particle immunity are insured.

A.3.19.7 Thermally matched axial leaded diodes. Diode construction with the coefficients of thermal expansion of

the die, plug, and package materials will be thermally matched such that the diodes are immune to intermittent opens

caused by thermal stress. Axial-leaded diode critical interfaces which comply with this definition shall utilize tungsten

or molybdenum plugs.

A.3.19.8 Metallurgically bonded-thermally matched-noncavity double plug construction. Diodes meeting this

definition shall be of double plug construction utilizing tungsten or molybdenum plugs. Both sides of the diode chip

(die) shall be bonded to the corresponding plug by a category I metallurgical bond. The package shall be thermally

matched, non-cavity construction (see A.3.19.1 through A.3.19.3, A.3.19.6, and A.3.19.7). The plated silver button

contact design is not permitted.

A.3.20 Noise figure. At a selected input frequency, the noise figure is the ratio of the total noise power per unit

bandwidth (at a corresponding output frequency) delivered to the output termination, to the portion thereof contributed

at the input frequency by the input termination, whose noise temperature is standard (293�K) at all frequencies.

A.3.21 Open circuit. A circuit shall be considered as open circuited if halving the magnitude of the terminating

impedance does not produce a change in the parameter being measured greater than the specified accuracy of the

measurement.

A.3.22 Package type. A package type is a package which has the same case outline (varying only in size),

configuration, materials (including bonding, wire, or ribbon and die attach), piece parts (excluding preforms which

differ only in size), and assembly processes.

A.3.23 Pulse. A pulse is a flow of electrical energy of short duration. See figure A-1 for illustrations of the

characteristics defined in A.3.24 through A.3.29, inclusive.

tr = Pulse rise time.

td = Pulse delay time.

tp = Pulse time.

ts = Pulse storage time.

tf = Pulse fall time.

tw = Pulse average time.

I = Pulse amplitude.

NOTES:

1. Subscript 2 denotes output.

2. Subscript 1 denotes input.

FIGURE A-1. Pulse measurements.