MIL-PRF-19500P
APPENDIX A
A.3.24 Pulse average time. The average pulse time of a pulse is the time duration from a point on the leading
edge which is 50 percent of the maximum amplitude to a point on the trailing edge which is 50 percent of the
maximum amplitude.
A.3.25 Pulse delay time. The delay time of a pulse is the time interval from a point at which the leading edge of
the input pulse has risen to 10 percent of its maximum amplitude to a point at which the leading edge of the output
pulse has risen to 10 percent of its maximum amplitude.
A.3.26 Pulse fall time. The fall time of a pulse is that time duration during which the amplitude of its trailing edge is
decreasing from 90 to 10 percent of the maximum amplitude.
A.3.27 Pulse rise time. The rise time of a pulse is that time duration during which the amplitude of its leading edge
is increasing from 10 to 90 percent of the maximum amplitude.
A.3.28 Pulse storage time. The storage time of a pulse is the time interval from a point 10 percent down from the
maximum amplitude on the trailing edge of the input pulse to a point 10 percent down from the maximum amplitude
on the trailing edge of the output pulse.
A.3.29 Pulse time. The pulse time of a pulse is the time interval from the point on the leading edge which is 90
percent of the maximum amplitude, to the point on the trailing edge which is 90 percent of the maximum amplitude.
A.3.30 Radiation failures. A radiation failure is defined at the lowest radiation level when either any device
parameter exceeds its specified post irradiation parameter limits (PIPL) or the device fails any functional test in
accordance with stated test conditions.
A.3.31 Radiation hardness assurance (RHA). That portion of performance verification testing that assures that
parts meet the radiation response characteristics as specified in this specification and the specification sheet.
A.3.32 Rating. The nominal value of any electrical, thermal, mechanical, or environmental quantity assigned to
define the operating conditions under which a component, machine, apparatus, or electronic device is expected to
give satisfactory service.
A.3.33 Reverse bias. The bias which tends to produce current flow in the reverse direction (n-type semiconductor
region at a positive potential relative to the p-type region).
A.3.34 Semiconductor devices. Electronic device in which the characteristic distinguishing electronic conduction
takes place within a semiconductor.
A.3.35 Semiconductor diode. A semiconductor device having two terminals and exhibiting a nonlinear voltage-
current characteristic.
A.3.36 Semiconductor junction. A region of transition between semiconductor regions of different electrical
properties (e.g., n-n+, p-n, p-p+ semiconductors) or between a metal and a semiconductor.
A.3.37 Short circuit. A circuit shall be considered short-circuited if doubling the magnitude of the terminating
impedance does not produce a change in the parameter being measured that is greater than the specified accuracy
of the measurement.
A.3.38 Small signal. A signal shall be considered small if doubling its magnitude does not produce a change in the
parameter being measured that is greater than the specified accuracy of the measurement.
A.3.39 Storage temperature. Storage temperature is a temperature at which the device may be stored without any
power being applied.
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