MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX A

A.3.40 Temperature coefficient. The ratio of the change in a parameter to the change in temperature.

A.3.41 Thermal compression bond. A bond achieved when pressure and temperature are present regardless of

how the temperature rise was achieved except without ultrasonic assist.

A.3.42 Thermal equilibrium. Thermal equilibrium is reached when doubling the test time interval does not produce

a change, due to thermal effects, in the parameter being measured that is greater than the specified accuracy of the

measurement.

A.3.43 Thermal resistance. Thermal resistance is the temperature rise, per unit power dissipation, of a junction

above the temperature of a stated external reference point under conditions of thermal equilibrium.

A.3.44 Thyristor. A bi-stable semiconductor device that comprises three or more junctions and can be switched

from the off-state or on-state to the opposite state.

A.3.45 Transistor. An active semiconductor device capable of providing power amplification and having three or

more terminals.

A.3.46 Expanded metallization. Expanded metallization is metallization that increases in area (example, metal line

to bond pad area) (see figure A-2).

FIGURE A-2. Example of expanded metallization.

A.3.47 Impulse waveform. A pulse with a defined virtual front and impulse duration for either a voltage or current

amplitude of unidirectional polarity.

A.3.48 Virtual front duration. The pulse time as defined by 1.67 times time for voltage to increase from 30 percent

to 90 percent of crest (peak value) or 1.25 times time for current to increase from 10 percent to 90 percent of crest.

A.3.49 Impulse duration. The time required for an impulse waveform to decay to 50 percent of the peak value

measured from the start of the virtual front duration of zero crossover.

A.3.50 Line. A collection of similar wafer fabrication flows, or similar package assembly flows used to manufacture

semiconductors in accordance with a specified process flow.

A.4 TRANSISTOR DEFINITIONS

A.4.1 Junction transistors, multijunction types.

A.4.1.1 Base. A region which lies between an emitter and collector of a transistor and into which minority carriers

are injected.