MIL-PRF-19500P
APPENDIX A
A.4.1.2 Collector. A region through which a primary flow of charge carriers leaves the base.
A.4.1.3 Cutoff current. The cutoff current is the measured value of dc current when a transistor is reverse biased
by a voltage less than the breakdown voltage.
A.4.1.4 Emitter. A region from which charge carriers that are minority carriers in the base are injected into the
base.
A.4.1.5 Junction, collector. A semiconductor junction, normally biased in the reverse direction, the current through
which can be controlled by the introduction of minority carriers into the base.
A.4.1.6 Junction, emitter. A semiconductor junction normally biased in the forward direction to inject minority
carriers into the base.
A.4.1.7 Saturation. A base current and a collector current condition resulting in a forward-biased collector junction.
A.4.2 Unijunction transistors.
A.4.2.1 Peak point. The point on the emitter current-voltage characteristic corresponding to the lowest current at
which the change in emitter base voltage with respect to emitter current equals zero.
A.4.2.2 Unijunction transistor. A three-terminal semiconductor device having one junction and a stable
negative-resistance characteristic over a wide temperature range.
A.4.2.3 Valley point. The point on the emitter current-voltage characteristic corresponding to the second lowest
current at which the change in emitter base voltage with respect to emitter current equals zero.
A.4.3 Field-effect transistors (FET).
A.4.3.1 Depletion-mode operation. The operation of a FET such that changing the gate to source voltage from
zero to a finite value decreases the magnitude of the drain current.
A.4.3.2 Depletion-type FET. A FET having appreciable channel conductivity for zero gate to source voltage. The
channel conductivity may be increased or decreased according to the polarity of the applied gate to source voltage.
A.4.3.3 Drain. A region into which majority carriers flow from the channel.
A.4.3.4 Enhancement-mode operation. The operation of a FET such that changing the gate to source voltage
from zero to a finite value increases the magnitude of the drain current.
A.4.3.5 Enhancement-mode FET. A FET having substantially zero channel conductivity for zero gate to source
voltage. The channel conductivity may be increased by the application of a gate to source voltage of appropriate
polarity.
A.4.3.6 FET. A transistor in which the conduction is due entirely to the flow of majority carriers through a
conduction channel controlled by an electric field arising from a voltage applied between the gate and source
terminals.
A.4.3.7 Gate. The electrode associated with the region in which the electric field due to the control voltage is
effective.
A.4.3.8 Insulated-gate FET. A FET having one or more gate electrodes which are electrically insulated from the
channel.
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