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MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P
APPENDIX A
A.4.3.9 Junction-gate FET. A FET that uses one or more gate regions to form p-n junction(s) with the channel.
A.4.3.10 MOSFET. An insulated gate FET in which the insulating layer between each gate electrode and the
channel is oxide material.
A.4.3.11 N-channel FET. A FET that has an n-type conduction channel.
A.4.3.12 P-channel FET. A FET that has a p-type conduction channel.
A.4.3.13 Source. A region from which majority carriers flow into the channel.
A.5 DIODE AND RECTIFIER DEFINITIONS
A.5.1 Signal diodes and rectifier diodes.
A.5.1.1 Semiconductor rectifier diode. A device having an asymmetrical voltage-current characteristic used for
rectification.
A.5.1.2 Semiconductor signal diode. A device having an asymmetrical voltage-current characteristic and used for
signal detection.
A.5.2 Microwave diodes.
A.5.2.1 Detector diode. A device which converts rf energy into dc or video output.
A.5.2.2 Gunn diode. A microwave diode that exhibits negative resistance arising from the bulk negative differential
conductivity occurring in several compound semiconductors such as gallium arsenide, and that operates at a
frequency determined by the transit time of charge bunches formed by this negative differential conductivity.
A.5.2.3 Impact, avalanche, and transit time diode (IMPATT). A semiconductor microwave diode that, when its
junction is biased into avalanche, exhibits a negative resistance over a frequency range determined by the transit
time of charge carriers through the depletion region.
A.5.2.4 Limited space-charge accumulation diode (LSA). A microwave diode similar to the Gunn diode except that
it achieves higher output power at frequencies, determined by the microwave cavity, that are several times greater
than the transit-time frequency by avoiding the formation of charge bunches or domains.
A.5.2.5 Matched pair. A pair of diodes identical in outline dimensions and with matched electrical characteristics.
The two diodes may both be forward polarity, or one forward and one reverse polarity, or both reverse polarity.
A.5.2.6 Microwave diode. A two terminal device that is responsive in the microwave region of the electromagnetic
spectrum, commonly regarded as extending from 1 GHz to 300 GHz.
A.5.2.7 Mixer diode. A microwave diode that combines rf signals at two frequencies to generate an rf signal at a
third frequency.
A.5.2.8 Trapped plasma avalanche transit time diode (TRAPATT). A microwave diode that, when its junction is
biased into avalanche, exhibits a negative resistance at frequencies below the transit time frequency range of the
diode due to generation and dissipation of trapped electron-hole plasma resulting from the intimate interaction
between the diode and a multiresonant microwave cavity.
A.5.3 Tunnel diodes.
A.5.3.1 Tunnel diodes. A device in which quantum-mechanical tunneling leads to a region of negative slope in the
forward direction of the current-voltage characteristic.
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