MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX A

A.5.3.2 Backward diode. A device in which quantum-mechanical tunneling leads to a current-voltage characteristic

with a reverse current greater than the forward current, for equal and opposite applied voltages.

A.5.4 Voltage-regulator and voltage-reference diodes.

A.5.4.1 Voltage-reference diode. A diode which is normally biased to operate in the breakdown region of its

voltage-current characteristic and which develops across its terminals a reference voltage of specified accuracy,

when biased to operate throughout a specified current and temperature range.

A.5.4.2 Voltage-regulator diode. A diode which is normally biased to operate in the breakdown region of its

voltage-current characteristic and which develops across its terminals an essentially constant voltage throughout a

specified current range.

A.5.5 Current-regulator diodes.

A.5.5.1 Current-regulator diode. A diode which limits current to an essentially constant value over a specified

voltage range.

A.5.6 Varactor diodes.

A.5.6.1 Varactor diode. A two terminal semiconductor device in which use is made of the property that its

capacitance varies with the applied voltage.

A.5.6.2 Tuning diode. A varactor diode used for rf tuning including functions such as automatic frequency control

(AFC) and automatic fine tuning (AFT).

A.5.7 Transient voltage suppressors.

A.5.7.1 Varistor. A transient voltage suppressor that is a nonlinear resistor with symmetrical characteristics.

A.5.7.2 Avalanche-junction. A transient voltage suppressor that is a semiconductor diode that can operate in

either the forward or reverse direction of its voltage-current characteristic to limit voltage transients.

A.5.7.3 Clamping voltage. The voltage in a region of low differential resistance that serves to limit the transient

voltage across the device terminals.

A.5.7.4 Clamping factor. The ratio of clamping voltage to breakdown voltage.

A.5.7.5 Peak impulse current. The peak current for a series of essentially identical impulses.

A.5.7.6 Standby current. The dc current through a transient voltage suppressor at rated standoff voltage.

A.5.7.7 Repetitive peak pulse power. The peak power dissipation resulting from the peak impulse current.

A.5.7.8 Response time. The time interval between the point on the impulse waveform at which the amplitude

exceeds the clamping voltage level and the peak of the voltage overshoot.

A.5.7.9 Voltage overshoot. The excess voltage over the clamping voltage that occurs when a current impulse

having short virtual front duration is applied.

A.5.7.10 Forward surge current. The peak current for a single impulse for forward biased diode.

A.5.7.11 Working peak voltage. The peak voltage, excluding all transient voltage, usually referred to as standoff

voltage.