MIL-PRF-19500 Semiconductor Devices, General Specification ForThis specification establishes the general performance requirements for semiconductor devices. Product assurance is provided by effective screening, conformance inspection, and process controls to mitigate risk. Mission assurance and standardization of parts are the highest priorities. This specification establishes a heritage program of semiconductor devices the military and space community can rely on to be dependable and available. Detail requirements and characteristics are specified in the specification sheets. Revisions to this specification and specification sheets are structured to assure the interchangeability of devices of the same part type regardless of manufacturing date code or conformance inspection \(CI\) completion date. Four quality levels for encapsulated devices are provided for in this specification, differentiated by the prefixes JAN, JANTX, JANTXV, and JANS. Eight radiation hardness assurance \(RHA\) levels are provided for the JANTXV and JANS quality levels. These are designated by the letters M, D, P, L, R, F, G, and H following the quality level portion of the prefix. Two quality levels for unencapsulated devices are provided for in this specification, differentiated by the prefixes JANHC and JANKC.

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MIL-PRF-19500P

APPENDIX A

A.6.3.5 Off-state. The condition of a thyristor corresponding to the high resistance low current portion of the

principal voltage-current characteristic between the origin and the breakover point in the switching quadrant.

A.6.3.6 On impedance. The differential impedance between the terminals through which the principal current flows

when the thyristor is in the on state.

A.6.3.7 On-state. The condition of a thyristor corresponding to the low resistance, low voltage portion of the

principal voltage-current characteristic in the switching quadrant.

A.6.3.8 Principal current. A generic term for the current through the device excluding gate current.

A.6.3.9 Principal voltage. The voltage between the main terminals.

A.6.3.10 Principal voltage-current characteristic (principal characteristic)). A function, usually represented

graphically, relating the principal voltage to the principal current, with gate current where applicable, as a parameter.

A.6.3.11 Reverse blocking impedance. The differential impedance between the two terminals through which the

principal current flows when the thyristor is in the reverse blocking state at a stated operating point.

A.6.3.12 Reverse blocking state. The condition of a reverse blocking thyristor corresponding to the portion of the

anode to cathode voltage-current characteristic for which the reverse currents are of lower magnitude than the

reverse breakdown current.

A.6.3.13 Switching quadrant. A quadrant of the principal voltage-current characteristic in which a device is

intended to switch between an off state and an on state.

A.7 OPTOELECTRONIC DEVICE DEFINITIONS

A.7.1 Optoelectronic device. A device that is responsive to or that emits or modifies electromagnetic radiation in

the visible, infrared, or ultraviolet spectral regions; or a device that utilizes such electromagnetic radiation for its

internal operation.

A.7.1.1 Conversion efficiency. The ratio of maximum available power output resulting from photovoltaic operation

to total incident radiant flux.

A.7.1.2 Dark condition. The condition attained when the electrical parameter under consideration approaches a

value which cannot be altered by further irradiation shielding.

A.7.1.3 Dark current. The current that flows through a photosensitive device in the dark condition.

A.7.1.4 Light current. The current that flows through a photosensitive device when it is exposed to radiant energy.

A.7.1.5 Photoconductive diode. A photodiode that is intended to be used as a photoconductive transducer.

A.7.1.6 Photocurrent. The difference in magnitude between light current and dark current.

A.7.1.7 Photodiode. A diode that is intended to be responsive to radiant energy.

A.7.1.8 Photodiode, avalanche. A photodiode that is intended to take advantage of avalanche multiplication of

photocurrent.

A.7.1.9 Photoemitter. A device that emits electromagnetic radiation in the visible, infrared, or ultraviolet spectral

regions.

A.7.1.10 Photosensitive device. A device that is responsive to electromagnetic radiation in the visible, infrared, or

ultraviolet spectral regions.